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| SI6946DQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.080 @ VGS = 4.5 V 0.110 @ VGS = 2.5 V ID (A) 2.8 2.1 D TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View S N-Channel MOSFET D 8 D2 S2 S2 G2 G SI6946DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a 150 C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C ID TA = 70_C IDM IS PD TJ, Tstg 2.3 20 1.0 1.0 W 0.64 -55 to 150 _C A Symbol VDS VGS Limit 20 "8 2.8 Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70177 S-49534--Rev. E, 06-Oct-97 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 125 Unit _C/W 2-1 SI6946DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS = 5 V, VGS = 4.5 V VDS = 5 V, VGS = 2.5 V VGS = 4.5 V, ID = 2.8 A rDS( ) DS(on) gfs VSD VGS = 2.5 V, ID = 2.1 A VDS = 15 V, ID = 2.8 A IS = 1.0 A, VGS = 0 V 12 1.2 "10 "4 0.080 0.110 W S V 0.6 "100 1 5 V nA mA Symbol Test Condition Min Typ Max Unit On-State Drain Currenta ID(on) A Drain Source On State Resistancea Drain-Source On-State Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.0 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W V, ID ^ 1 A, VGEN = 4 5 V RG = 6 W A 4.5 V, VDS = 10 V VGS = 4 5 V ID = 2 8 A V, 4.5 V, 2.8 16 3 6 37 66 56 57 26 60 100 100 100 70 ns 40 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70177 S-49534--Rev. E, 06-Oct-97 SI6946DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 8 thru 3 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 25_C 12 20 TC = -55_C 125_C Transfer Characteristics 12 2V 8 8 4 1V 0 0 2 4 6 8 10 4 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 1500 Capacitance r DS(on) - On-Resistance ( ) 1200 C - Capacitance (pF) 0.15 900 0.10 VGS = 2.5 V 600 Ciss Coss Crss 0.05 VGS = 4.5 V 300 0 0 2 4 6 8 10 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 5 VDS = 10 V ID = 2.8 A V GS - Gate-to-Source Voltage (V) Gate Charge 2.0 On-Resistance vs. Junction Temperature VGS = 4.5 V IDS = 2.8 A 3 r DS(on) - On-Resistance ( ) (Normalized) 0 4 8 12 16 20 4 1.6 1.2 2 0.8 1 0.4 0 0 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 Document Number: 70177 S-49534--Rev. E, 06-Oct-97 2-3 SI6946DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 20 0.09 I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( ) 0.10 On-Resistance vs. Gate-to-Source Voltage 0.08 0.07 TJ = 25_C 0.06 ID = 2.8 A 0.05 1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0.04 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 1.0 Threshold Voltage 25 Single Pulse Power 20 0.5 V GS(th) Variance (V) 15 0.0 ID = 250 A Power (W) 10 -0.5 5 -1.0 -50 0 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125_C/W 0.02 Single Pulse 0.01 10-4 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70177 S-49534--Rev. E, 06-Oct-97 |
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